FinFETs and Other Multi-Gate Transistors (eBook)

Preface 6
Table of Content 9
Contributors 14
1 The SOI MOSFET: from Single Gate to Multigate 15
1.1 MOSFET Scaling and Moore’s Law 15
1.2 Short-Channel Effects 16
1.3 Gate Geometry and Electrostatic Integrity 18
1.4 A Brief History of Multiple-Gate MOSFETs 22
1.5 Multigate MOSFET Physics 31
References 51
2 Multigate MOSFET Technology 63
2.1 Introduction 63
2.2 Active Area: Fins 66
2.3 Gate Stack 84
2.4 Source/Drain Resistance and Capacitance 99
2.5 Mobility and Strain Engineering 105
2.6 Contacts to the Fins 112
Acknowledgments 114
References 115
3 BSIM-CMG: A Compact Model for Multi-Gate Transistors 126
3.1 Introduction 126
3.2 Framework for Multigate FET Modeling 127
3.3 Multigate Models: BSIM-CMG and BSIM-IMG 128
3.4 BSIM-CMG 130
3.5 The BSIM-IMG Model 160
3.6 Summary 164
References 164
4 Physics of the Multigate MOS System 167
4.1 Device electrostatics 167
4.2 Double gate MOS system 175
4.3 Two-dimensional confinement 196
References 197
5 Mobility in Multigate MOSFETs 202
5.1 Introduction 202
5.2 Double-Gate MOSFETs and FinFETs 203
5.3 Silicon multiple-gate nanowires 244
References 258
6 Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs 268
6.1 A brief history of radiation effects in SOI 268
6.2 Total lonizing dose effects 270
6.3 Single-event effects 282
References 298
7 Multi-Gate MOSFET Circuit Design 303
7.1 Introduction 303
7.2 Digital Circuit Design 304
7.3 Analog Circuit Design 325
7.4 SoC Design and Technology Aspects 341
Acknowledgments 342
References 343
Index 346