Microscopy of Semiconducting Materials (eBook)

Epitaxy: Wide Band-Gap Nitrides.- Structural properties of GaN quantum dots.- Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes.- Investigation of InxGa1?x N islands with electron microscopy.- First stage of nucleation of GaN on (0001) sapphire.- In GaN-GaN quantum wells: their luminescent and nano-structural properties.- Evolution of InGaN/GaN nanostructures and wetting layers during annealing.- Origins and reduction of threading dislocations in GaN epitaxial layers.- Oxygen segregation to nanopipes in gallium nitride.- Strain relaxation in (Al,Ga)N/GaN heterostructures.- A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures.- Reduction of threading dislocation density using in-situ SiNx interlayers.- The nucleation structure for cracks in AlGaN epitaxial layers.- Microstructural and optical characterisation of InN layers grown by MOCVD.- Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE.- Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates.- Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers.- Characterization of defects in ZnS and GaN.- Epitaxy: Silicon-Germanium Alloys.- Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates.- TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB.- Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources.- TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers.- Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy.- A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM.- Epitaxy: Growth and Defect Phenomena.- Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures.- Beta to alpha transition and defects on SiC on Si grown by CVD.- Strain relaxation and void reduction in SiC on Si by Ge predeposition.- Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops.- Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy.- TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs.- First-principles calculations of 002 structure factors for electron scattering in strained InxGa1?xAs.- Structural characterisation of MBE grown zinc-blende Ga1?xMnxN/GaAs(001) as a function of Ga flux.- Magic matching in semiconductor heterojunctions.- Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure.- Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography.- A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire.- High Resolution Microscopy and Nanoanalysis.- Aberration-corrected HREM/STEM for semiconductor research.- Spherical aberration correction and exitplane wave function reconstruction: Synergetic tools for the atomic-scale imaging of structural imperfections in semiconductor materials.- Strain mapping from HRTEM images.- Quantification of the influence of TEM operation parameters on the error of HREM image matching.- ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide.- Electron holography of doped semiconductors: when does it work and is it quantitative?.- Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration?.- Interference electron microscopy of reverse-biased p-n junctions.- Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions.- Towards quantitative electron holography of electrostatic potentials in doped semiconductors.- Three-dimensional analysis of the dopant potential of a silicon p-n junction by holographic tomography.- Ab initio computation of the mean inner Coulomb potential for technologically important semiconductors.- Self-Organised and Quantum Domain Structures.- Electron beam induced deposition of position and size controlled structures on the nanometre scale.- The structure of coherent and incoherent InAs/GaAs quantum dots.- Electron microscopy and optical spectroscopy of single InAs/InP quantum dots.- Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxy.- Effect of annealing on anticorrelated InGaAs/GaAs quantum dots.- Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra.- Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-?m InAs quantum dots.- Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxy.- Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings.- In distribution in InGaAs quantum wells and quantum islands.- Activation energy for surface diffusion in GaInNAs quantum wells.- Growth and surface structure of silicon nanowires observed in real time in the electron microscope.- Self-catalytic growth of gallium nitride nanoneedles under Garich conditions.- Nanocontacts fabricated by focused ion beam: characterisation and application to nanometre-sized materials.- Cross-sectional studies of epitaxial growth of InP and GaP nanowires on Si and Ge.- Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method.- Measurement of the mean inner potential of ZnO nanorods by transmission electron holography.- Quantum effects in band gap-modulated amorphous carbon superlattices.- Structure of rolled-up semiconductor nanotubes.- Defects and interfaces in nanoparticles.- TEM characterization of magnetic Sm- and Co-nanocrystals in SiC.- Microscopy of nanoparticles for semiconductor devices.- Structural and electrophysical properties of a nanocomposite based upon the Si-SiO2 system.- HRTEM and XRD analysis of P6mm and Ia3d double gyroidal WO3 structures.- Processed Silicon and Other Device Materials.- Research highlights and impacts upon industry for nanoelectronics in the university system of Taiwan.- TEM investigations of epitaxial high-? dielectrics on silicon.- Damage layer in silica-based low-k material induced by the patterning plasma process studied by energy-filtered TEM.- Measurement of field-emission properties of a single crystal silicon emitter using scanning electron microscopy.- Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon.- On the mechanism of {113}-defect formation in Si.- The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments.- HREM study of an epitaxial growth defect.- Resonant Raman microscopy of stress in silicon-based microelectronics.- TEM study of silicon implanted with fluorine and boron applied to piezoresistor manufacturing.- Silicides for advanced CMOS devices.- Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN.- Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces.- Corrosion of FIB-milled Cu during air exposure.- Device Studies.- FIB applications for semiconductor device failure analysis.- A method for 3D failure analysis using a dedicated FIB-STEM system.- Failure analysis studies in pseudomorphic SiGe channel p-MOSFET devices.- TEM specimen preparation technique for III–V semiconductor devices by using a novel FIB-Ar ion milling method.- Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques.- An organic two dimensional photonic crystal microcavity processed by focused ion beam milling.- Failure analysis of degraded (In,Ga)P/GaAs heterojunction bipolar transistors by TEM.- Strain measurements of ULSI devices using LACBED with TSUPREM modeled displacements.- Electron holography for visualisation of different doped areas in silicon-germanium heterojunction bipolar transistors.- Ar sputter shadow method (ASSM) - a novel way to overcome the charging effect during AES bond pad analysis.- Scanning Electron and Scanning Probe Advances.- Challenges and opportunities of Ångstrom-level analysis.- Sub-Ångstrom and 3-dimensional STEM for semiconductor research.- Cathodoluminescence studies of AlGaAs/GaAs core-shell nanowires.- Carrier diffusion lengths of (In,Ga)As, GaAs and (In,Ga)(As,N) quantum wells studied by spatially resolved cathodoluminescence.- An analysis of the alpha parameter used for extracting surface recombination velocity in EBIC measurements.- The effects of boundary conditions on dopant region imaging in scanning electron microscopy.- A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures.- Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy.- Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy.- Mapping of the effective electron mass in III–V semiconductors.- Reconstruction of images of surface height in scanning electron microscopy.- Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors.- The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEM.- Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination.- Electron microscopy characterisation of ZnS:Cu:Cl phosphors.- Resistive contrast in R-EBIC from thin films.- A diode model for SEM-REBIC contrast in ZnO varistors.- The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors.