Hierarchical Device Simulation - Christoph Jungemann, Bernd Meinerzhagen

Hierarchical Device Simulation

The Monte-Carlo Perspective
Buch | Hardcover
XVI, 261 Seiten
2003 | 2003
Springer Wien (Verlag)
978-3-211-01361-8 (ISBN)
106,99 inkl. MwSt
lt;p>This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation - Balance Equations - The Microscopic Relaxation Time - Fluctuations in the Steady-State - References The Monte-Carlo Method Basic Monte-Carlo Methods - The Monte-Carlo Solver of the Boltzmann Equation - Velocity Autocorrelation Function - Basic Statistics - Convergence Estimation - References Scattering Mechanisms Phonon Scattering - Alloy Scattering - Impurity Scattering - Impact Ionization by Electrons - Surface Roughness Scattering - References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon - Basic Properties of the Band Structure of Strained SiGe - k-Space Grid - Calculation of the Density of States - Mass Tensor Evaluation - Particle Motion in Phase-Space - Selection of a Final State in k-Space - References Device Simulation Device Discretization - Band Edges - Poisson Equation - Self-Consistent Device Simulation - Nonlinear Poisson Equation - Nonself-Consistent Device Simulation - Statistical Enhancement - Terminal Current Estimation - Contact Resistance - Normalization of Physical Quantities - References Momentum-Based Transport Models The Hydrodynamic Model - Small-Signal Analysis - Noise Analysis - The Drift-Diffusion Model - Transport and Noise Parameter Simulation - References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error - In-Advance CPU Time Estimation - References Results N+ NN+ and P+ PP+ Structures - MOSFETs - SiGe HBTs Subject Index

Erscheint lt. Verlag 5.6.2003
Reihe/Serie Computational Microelectronics
Zusatzinfo XVI, 261 p.
Verlagsort Vienna
Sprache englisch
Maße 155 x 235 mm
Gewicht 635 g
Themenwelt Technik Elektrotechnik / Energietechnik
Schlagworte Analysis • Computer-Aided Design (CAD) • Device simulation • Halbleiter • microprocessor • Model • Monte-Carlo Method • Monte-Carlo-Methode • Monte-Carlo Simulation • Norm • Physics • semiconductor • SiGe HBTs • Signal • Si MOSFETs • Simulation • Statistics • Transport
ISBN-10 3-211-01361-X / 321101361X
ISBN-13 978-3-211-01361-8 / 9783211013618
Zustand Neuware
Haben Sie eine Frage zum Produkt?
Wie bewerten Sie den Artikel?
Bitte geben Sie Ihre Bewertung ein:
Bitte geben Sie Daten ein:
Mehr entdecken
aus dem Bereich
DIN-Normen und Technische Regeln für die Elektroinstallation

von DIN; ZVEH; Burkhard Schulze

Buch | Softcover (2023)
Beuth (Verlag)
86,00
Grundlagen und Praxis

von Anton Karle

Buch | Hardcover (2022)
Hanser (Verlag)
34,99