Hierarchical Device Simulation
Springer Wien (Verlag)
978-3-211-01361-8 (ISBN)
Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation - Balance Equations - The Microscopic Relaxation Time - Fluctuations in the Steady-State - References The Monte-Carlo Method Basic Monte-Carlo Methods - The Monte-Carlo Solver of the Boltzmann Equation - Velocity Autocorrelation Function - Basic Statistics - Convergence Estimation - References Scattering Mechanisms Phonon Scattering - Alloy Scattering - Impurity Scattering - Impact Ionization by Electrons - Surface Roughness Scattering - References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon - Basic Properties of the Band Structure of Strained SiGe - k-Space Grid - Calculation of the Density of States - Mass Tensor Evaluation - Particle Motion in Phase-Space - Selection of a Final State in k-Space - References Device Simulation Device Discretization - Band Edges - Poisson Equation - Self-Consistent Device Simulation - Nonlinear Poisson Equation - Nonself-Consistent Device Simulation - Statistical Enhancement - Terminal Current Estimation - Contact Resistance - Normalization of Physical Quantities - References Momentum-Based Transport Models The Hydrodynamic Model - Small-Signal Analysis - Noise Analysis - The Drift-Diffusion Model - Transport and Noise Parameter Simulation - References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error - In-Advance CPU Time Estimation - References Results N+ NN+ and P+ PP+ Structures - MOSFETs - SiGe HBTs Subject Index
Erscheint lt. Verlag | 5.6.2003 |
---|---|
Reihe/Serie | Computational Microelectronics |
Zusatzinfo | XVI, 261 p. |
Verlagsort | Vienna |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 635 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | Analysis • Computer-Aided Design (CAD) • Device simulation • Halbleiter • microprocessor • Model • Monte-Carlo Method • Monte-Carlo-Methode • Monte-Carlo Simulation • Norm • Physics • semiconductor • SiGe HBTs • Signal • Si MOSFETs • Simulation • Statistics • Transport |
ISBN-10 | 3-211-01361-X / 321101361X |
ISBN-13 | 978-3-211-01361-8 / 9783211013618 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
aus dem Bereich