High Dielectric Constant Materials -

High Dielectric Constant Materials

VLSI MOSFET Applications

Howard Huff, David Gilmer (Herausgeber)

Buch | Hardcover
XXIV, 710 Seiten
2004 | 2005
Springer Berlin (Verlag)
978-3-540-21081-8 (ISBN)
353,09 inkl. MwSt
lt;p>Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Classical Regime for SiO.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2 Based MOSFETS: Film Growth and Si-SiO2 Interface Properties.- Oxide Reliability Issues.- The Economic Implications of Moore's Law.- Transition to Silicon Oxynitrides.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation.- Transition to High-k Gate Dielectrics.- Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria.- Materials Issues for High-k Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-k Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon.- High-k Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-k Gate Dielectric Materials Integrated Circuit Device Design Issues.- Future Directions for Ultimate Scaling Technology Generations.- High-k Crystalline Gate Dielectrics: A Research Perspective.- High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.

Erscheint lt. Verlag 30.9.2004
Reihe/Serie Springer Series in Advanced Microelectronics
Zusatzinfo XXIV, 710 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 1220 g
Themenwelt Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte Circuit • CMOS • dielectrics • electronic structure • field-effect transistor • Gate electrodes • Halbleiterbauelemente • High-K dielectrics • History • Integrated circuit • Leistungsfeldeffekttransistor • Material • metal oxide semiconductur field-effect transistor • MOSFET scaling • semiconductor • Silicon • Silicon dioxide • Technologie • Transistor • VLSI
ISBN-10 3-540-21081-4 / 3540210814
ISBN-13 978-3-540-21081-8 / 9783540210818
Zustand Neuware
Haben Sie eine Frage zum Produkt?
Wie bewerten Sie den Artikel?
Bitte geben Sie Ihre Bewertung ein:
Bitte geben Sie Daten ein:
Mehr entdecken
aus dem Bereich

von Siegfried Hunklinger; Christian Enss

Buch | Softcover (2023)
De Gruyter Oldenbourg (Verlag)
79,95

von Rudolf Gross; Achim Marx

Buch | Hardcover (2022)
De Gruyter Oldenbourg (Verlag)
74,95
Aufgaben und Lösungen

von Rudolf Gross; Achim Marx; Dietrich Einzel; Stephan Geprägs

Buch | Softcover (2023)
De Gruyter Oldenbourg (Verlag)
39,95