High Dielectric Constant Materials
Springer Berlin (Verlag)
978-3-540-21081-8 (ISBN)
Classical Regime for SiO.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2 Based MOSFETS: Film Growth and Si-SiO2 Interface Properties.- Oxide Reliability Issues.- The Economic Implications of Moore's Law.- Transition to Silicon Oxynitrides.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation.- Transition to High-k Gate Dielectrics.- Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria.- Materials Issues for High-k Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-k Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon.- High-k Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-k Gate Dielectric Materials Integrated Circuit Device Design Issues.- Future Directions for Ultimate Scaling Technology Generations.- High-k Crystalline Gate Dielectrics: A Research Perspective.- High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.
Erscheint lt. Verlag | 30.9.2004 |
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Reihe/Serie | Springer Series in Advanced Microelectronics |
Zusatzinfo | XXIV, 710 p. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 1220 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
Schlagworte | Circuit • CMOS • dielectrics • electronic structure • field-effect transistor • Gate electrodes • Halbleiterbauelemente • High-K dielectrics • History • Integrated circuit • Leistungsfeldeffekttransistor • Material • metal oxide semiconductur field-effect transistor • MOSFET scaling • semiconductor • Silicon • Silicon dioxide • Technologie • Transistor • VLSI |
ISBN-10 | 3-540-21081-4 / 3540210814 |
ISBN-13 | 978-3-540-21081-8 / 9783540210818 |
Zustand | Neuware |
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