Epitaxial graphene on SiC for quantum resistance metrology

E-111: M. Kruskopf:
Expitaxial graphene on SiC for quantum resistance metrology
Engl., 122. S., 59 Abb., ISBN 978-3-95606-325-1, 2017€ 18,00
In this thesis, processes for the fabrication of a new generation of graphene-based resistance standards were developed. To overcome the challenges of standard epitaxial growth techniques e.g. the formation of high step edges in the silicon carbide substrate and the formation of bilayer graphene the new methods apply different ways to control the amount of available carbon during the growth stages.