Introduction to Nanoelectronic Single-Electron Circuit Design

Jaap Hoekstra was born in Amsterdam, the Netherlands, in 1955. He received an MSc in experimental physics from the University of Amsterdam and a PhD degree for research on (junction) charge-coupled devices, involving device physics, device development and subsystem concepts, from the Delft University of Technology, the Netherlands. From 1988 to 1995 he was at the Computer Architecture Laboratory at the TU-Delft working in the field of artificial neural networks. From 1996 to 1997 he worked on chaotic dynamics in power systems at the laboratory of Electrical Power Systems. In April 1997 he joined the Electronic Research Laboratory, where he is currently involved in research projects on artificial neural nets, biologic-inspired networks, neuromorphic circuits, nanoscale electronic devices, and single-electron tunneling devices.

Tunneling Experiments in Nanoelectronics. Current in Electrodynamics and Circuit Theory. Free Electrons in Quantum Mechanics. Current and Tunnel Current in Quantum Physics. Energy in Circuit Theory. Energy in the Switched Two-Capacitor Circuit. Impulse Circuit Model for Single-Electron Tunneling — Zero Tunneling Time. Impulse Circuit Model for Single-Electron Tunneling — Nonzero Tunneling Times. Generalizing the Theory to Multi-Junction Circuits. Single-Electron Tunneling Circuit Examples. Circuit Design Methodologies. More Potential Applications and Challenges.