Progress in SOI Structures and Devices Operating at Extreme Conditions
Springer-Verlag New York Inc.
978-1-4020-0575-6 (ISBN)
Innovation in material technologies.- Perspectives of SIMOX technology.- MBE growth of the top layer in Si/YSZ/Si structure.- SiCOI structures. Technology and characterization.- New SiC on insulator wafers based on the Smart-Cut® approach and their potential applications.- ELTRAN®(SOI-Epi Wafer™) Technology.- Low dimension properties of nanostructures on ultra thin layers of silicon formed by oxidation of ion cut SOI wafers and electron lithography.- Reliability of SOI devices operating at harsh conditions.- SOI for Harsh Environment Applications in the USA.- Performance and reliability of deep submicron SOI MOSFETs in a wide temperature range.- Strategies for high-temperature electronics: a Western European Perspective.- Charge carrier injection and trapping in the buried oxides of SOI structures.- Cryogenic investigations of SIMOX buried oxide parameters.- Gate-All-Around Technology for Harsh Environment Applications.- Low-Noise High-Temperature SOI Analog Circuits.- Influence of ?-radiation on short channel SOI-MOSFETs with thin SiO2films.- Radiation effects in SOI magnetic sensitive elements under different radiation conditions.- Characterization of advanced SOI materials and devices.- Similarity relation for I-V characteristics of FETs with different &channel shape.- Laser-recrystallized SOI layers for sensor applications at cryogenic temperatures.- Characterization and modeling of advanced SOI materials and &devices.- Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes.- Defect creation mechanisms due to hot-carriers in 0.15 ?m SIMOX MOSFETs.- Defects and their electronic properties in high-pressure-annealed &SOI structures sliced by hydrogen.- DC and AC models of partially-depleted SOI MOSFETs in weakinversion.- Perspectives of SOI structures and devices.- On scaling the thin film Si thickness of SOI substrates. A Perspective on Wafer Bonding for Thin Film Devices.- Oxidized porous silicon based SOI: untapped resources.- Electron-hole pair reversed drift in SOI structure.- A novel depleted semi-insulating silicon material for high frequency applications.- Self-organizing growth of silicon dot- and wire-like microcrystals on isolated substrates.- Author Index.
Erscheint lt. Verlag | 30.4.2002 |
---|---|
Reihe/Serie | NATO Science Series II: Mathematics, Physics and Chemistry ; 58 |
Zusatzinfo | X, 351 p. |
Verlagsort | New York, NY |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 1-4020-0575-X / 140200575X |
ISBN-13 | 978-1-4020-0575-6 / 9781402005756 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
aus dem Bereich