GaN and Related Alloys – 2001: Volume 693
Seiten
2002
Materials Research Society (Verlag)
978-1-55899-629-8 (ISBN)
Materials Research Society (Verlag)
978-1-55899-629-8 (ISBN)
- Titel ist leider vergriffen;
keine Neuauflage - Artikel merken
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
This book focuses on three main themes. Theme one - advances in basic science. Point defects, dislocations, doping, the properties of nitride alloys with a special emphasis on localization phenomena and GaAsN alloys (which are very promising for long-wavelength emitters), transport and optical properties are also featured. Theme two - growth and growth-related issues. Significant advances have been made in understanding/improving all major nitride growth techniques (MBE, MOCVD, HVPE). Techniques such as ELOG and the development of bulk-like substrates are receiving attention as methods to reduce the number of dislocations. Theme three - devices. Tremendous progress has been reported in device design and optimization, and also in understanding device processing issues such as p-contacts, laser lift-off, and etching. Overall, the book offers a broad exchange of scientific knowledge and technical expertise. Topics include: molecular beam epitaxy and growth kinetics; point defects and doping; light emitters; nitride alloys and lateral epitaxy; quantum wells; transport and optical properties; vapor phase epitaxy; extended defects; electronic devices and processing.
This book focuses on three main themes. Theme one - advances in basic science. Point defects, dislocations, doping, the properties of nitride alloys with a special emphasis on localization phenomena and GaAsN alloys (which are very promising for long-wavelength emitters), transport and optical properties are also featured. Theme two - growth and growth-related issues. Significant advances have been made in understanding/improving all major nitride growth techniques (MBE, MOCVD, HVPE). Techniques such as ELOG and the development of bulk-like substrates are receiving attention as methods to reduce the number of dislocations. Theme three - devices. Tremendous progress has been reported in device design and optimization, and also in understanding device processing issues such as p-contacts, laser lift-off, and etching. Overall, the book offers a broad exchange of scientific knowledge and technical expertise. Topics include: molecular beam epitaxy and growth kinetics; point defects and doping; light emitters; nitride alloys and lateral epitaxy; quantum wells; transport and optical properties; vapor phase epitaxy; extended defects; electronic devices and processing.
Erscheint lt. Verlag | 23.7.2002 |
---|---|
Reihe/Serie | MRS Proceedings |
Zusatzinfo | Worked examples or Exercises |
Sprache | englisch |
Maße | 152 x 229 mm |
Gewicht | 1350 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
ISBN-10 | 1-55899-629-X / 155899629X |
ISBN-13 | 978-1-55899-629-8 / 9781558996298 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
Mehr entdecken
aus dem Bereich
aus dem Bereich
DIN-Normen und Technische Regeln für die Elektroinstallation
Buch | Softcover (2023)
Beuth (Verlag)
86,00 €
Kolbenmaschinen - Strömungsmaschinen - Kraftwerke
Buch | Hardcover (2023)
Hanser (Verlag)
49,99 €