Hierarchical Device Simulation
Springer Wien (Verlag)
978-3-211-01361-8 (ISBN)
1 Introduction.- References.- 2 Semiclassical Transport Theory.- 2.1 The Boltzmann Transport Equation.- 2.2 Balance Equations.- 2.3 The Microscopic Relaxation Time.- 2.4 Fluctuations in the Steady-State 25 References.- 3 The Monte-Carlo Method.- 3.1 Basic Monte-Carlo Methods.- 3.2 The Monte-Carlo Solver of the Boltzmann Equation.- 3.3 Velocity Autocorrelation Function.- 3.4 Basic Statistics.- 3.5 Convergence Estimation.- References.- 4 Scattering Mechanisms.- 4.1 Phonon Scattering.- 4.2 Alloy Scattering.- 4.3 Impurity Scattering.- 4.4 Impact Ionization by Electrons.- 4.5 Surface Roughness Scattering.- References.- 5 Full-Band Structure.- 5.1 Basic Properties of the Band Structure of Relaxed Silicon.- 5.2 Basic Properties of the Band Structure of Strained SiGe.- 5.3 k-Space Grid.- 5.4 Calculation of the Density of States.- 5.5 Mass Tensor Evaluation.- 5.6 Particle Motion in Phase-Space.- 5.7 Selection of a Final State in k-Space.- References.- 6 Device Simulation.- 6.1 Device Discretization.- 6.2 Band Edges.- 6.3 Poisson Equation.- 6.4 Self-Consistent Device Simulation.- 6.5 Nonlinear Poisson Equation.- 6.6 Nonself-Consistent Device Simulation.- 6.7 Statistical Enhancement.- 6.8 Terminal Current Estimation.- 6.9 Contact Resistance.- 6.10 Normalization of Physical Quantities.- References.- 7 Momentum-Based Transport Models.- 7.1 The Hydrodynamic Model.- 7.2 Small-Signal Analysis.- 7.3 Noise Analysis.- 7.4 The Drift-Diffusion Model.- 7.5 Transport and Noise Parameter Simulation.- References.- 8 Stochastic Properties of Monte-Carlo Device Simulations.- 8.1 Stochastic Error.- 8.2 In-Advance CPU Time Estimation.- References.- 9 Results.- 9.1 N+NN+ and P+PP+ Structures.- 9.2 MOSFETs.- 9.3 SiGe HBTs.- References.
Erscheint lt. Verlag | 5.6.2003 |
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Reihe/Serie | Computational Microelectronics |
Zusatzinfo | XVI, 261 p. |
Verlagsort | Vienna |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 635 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | Analysis • Computer-Aided Design (CAD) • Device simulation • Halbleiter • microprocessor • Model • Monte-Carlo Method • Monte-Carlo-Methode • Monte-Carlo Simulation • Norm • Physics • semiconductor • SiGe HBTs • Signal • Si MOSFETs • Simulation • Statistics • Transport |
ISBN-10 | 3-211-01361-X / 321101361X |
ISBN-13 | 978-3-211-01361-8 / 9783211013618 |
Zustand | Neuware |
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