Simulation of Semiconductor Processes and Devices 2007 (eBook)

Preface 5
Contents 7
Nanomanufacturing Technology and Opportunities Through Physically- Based Simulation 16
Atomistic Modeling of Defect Diffusion in SiGe 24
Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches 28
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm- Node pMOSFETs 44
Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants 48
Modeling of Re-Sputtering Induced Bridge of Tungsten Bit- Lines for NAND Flash Memory Cell with 37nm Node Technology 60
Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation ( DCT) 64
Thin Body Effects to Suppress Random Dopant Fluctuations in Nano- Scaled MOSFETs 108
Impact of Shear Strain and Quantum Confinement on < 110>
Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/ D for pFETs 124
Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner 128
3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor 132
A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/ Slip Functions for Scaled Device Design Phase 148
Modeling Study of Ultra-Thin Ge Layers Using Tight- Binding, LCBB and kp Methods 160
A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full- Band Tight- Binding Approach 176
Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfOi 180
Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures 204
Monte Carlo Study on Number of Scattering Events for Quasi- Ballistic Transport in MOSFETs 212
Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method 220
Transport in Silicon Nanowire and Single-Electron Transistors 224
Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors 235
Numerical Simulation of Field Emission in the Surface Conduction Electron- Emitter Display 247
Hopping Transport of Electrons via Si-Dot 263
Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method 267
Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami 275
Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping 279
Simulation of AlGaN/GaN HEMTs' Breakdown Voltage Enhancement Using Grating Field Plates 291
Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AIN Interlayer 295
Compact Modeling for New Transistor Structures 299
Compact Double-Gate MOSFET Model Correctly Predicting Volume- Inversion Effects 303
Modeling NAND Flash Memories for Circuit Simulations 307
Calibrated Hydrodynamic Simulation of Deeply-Scaled Well- Tempered Nanowire Field Effect Transistors 319
Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes 327
A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire 335
Maxwell Equations on Unstructured Grids Using Finite- Integration Methods 347
Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories 359
EMC Simulation of THz Emission from Semiconductor Devices 367
Enhanced Band- to- Band Tunneling- Induced- Hot- EIectron Injection in P- Channel Flash by SiGe Channel and HfOi Tunnel Dielectric 371
Challenges in 3D Process Simulation for Advanced Technology Understanding 375
Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature 379
Hot-Carrier Behaviour of a 0.35 jim High-Voltage n- Channel LDMOS Transistor 383
Dynamic Monte Carlo Simulation of an Amorphous Organic Device 387
Charge Injection Model in Organic Light- Emitting Diodes Based on a Master Equation 391
Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors 395
Asymmetrical Triple-Gate FET 403
The Optimization of Low Power Operation SRAM Circuit for 32nm Node 411
Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation 415
Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On- Resistance vs. Overlap Capacitance in ( 100) and ( llO)- Oriented MOSFETs 419
Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism 423
Modeling of Deposition During CsFs/CO/Oi/Ar Plasma Etching Using Topography and Composition Simulation 439
Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes 443
Atomistic study of Metal/High-K interface 451
Ab- initio Calculations of Indium Migration in Uniaxial Strained Silicon 455