Advanced Power MOSFET Concepts (eBook)
XVI, 562 Seiten
Springer US (Verlag)
978-1-4419-5917-1 (ISBN)
During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas.
'Advanced Power MOSFET Concepts' provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas."e;Advanced Power MOSFET Concepts"e; provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Advanced Power MOSFET Concepts 3
Dedication 5
Preface 7
References 9
Contents 11
Chapter 1: Introduction 17
1.1 Ideal Power Switching Waveforms 18
1.2 Ideal and Typical Power MOSFET Characteristics 19
1.3 Typical Power MOSFET Structures 21
1.4 Ideal Drift Region for Unipolar Power Devices 22
1.5 Charge-Coupled Structures: Ideal Specific On-Resistance 24
1.6 Revised Breakdown Models for Silicon 28
1.7 Typical Power MOSFET Applications 34
1.7.1 DC-DC Sync-Buck Converter 34
1.7.2 Variable-Frequency Motor Drive 35
1.8 Summary 37
References 37
Chapter 2: D-MOSFET Structure 38
2.1 The D-MOSFET Structure 38
2.2 Power D-MOSFET On-Resistance 40
2.2.1 Channel Resistance 43
2.2.2 Accumulation Resistance 44
2.2.3 JFET Resistance 44
2.2.4 Drift Region Resistance 46
2.2.5 N+ Substrate Resistance 47
2.2.6 Drain and Source Contact Resistance 47
2.2.7 Total On-Resistance 48
2.2.7.1 Simulation Results 49
2.3 Blocking Voltage 52
2.3.1 Impact of Edge Termination 53
2.3.2 Impact of Graded Doping Profile 54
2.3.2.1 Simulation Results 55
2.4 Output Characteristics 59
2.4.1 Simulation Example 60
2.5 Device Capacitances 61
2.5.1 Simulation Example 64
2.6 Gate Charge 66
2.6.1 Simulation Example 67
2.7 Device Figures of Merit 69
2.8 Discussion 71
References 76
Chapter 3: U-MOSFET Structure 77
3.1 The U-MOSFET Structure 77
3.2 Power U-MOSFET On-Resistance 80
3.2.1 Channel Resistance 81
3.2.2 Accumulation Resistance 82
3.2.3 Drift Region Resistance 82
3.2.4 Total On-Resistance 83
3.2.4.1 Simulation Results 84
3.3 Blocking Voltage 87
3.3.1 Impact of Edge Termination 88
3.3.2 Impact of Graded Doping Profile 88
3.3.2.1 Simulation Results 89
3.4 Output Characteristics 94
3.4.1 Simulation Example 94
3.5 Device Capacitances 95
3.5.1 Simulation Example 98
3.6 Gate Charge 100
3.6.1 Simulation Example 102
3.7 Device Figures of Merit 104
3.8 Thick Trench Bottom Oxide Structure 106
3.8.1 On-Resistance 106
3.8.2 Reverse Transfer Capacitance 106
3.8.3 Gate Charge 108
3.8.4 Device Figures-of-Merit 109
3.8.4.1 Simulation Results 110
3.9 High Voltage Devices 115
3.9.1 Simulation Results 115
3.10 Inductive Load Turn-Off Characteristics 120
3.10.1 Simulation Results 125
3.11 Discussion 126
References 131
Chapter 4: SC-MOSFET Structure 132
4.1 The SC-MOSFET Structure 133
4.2 Power SC-MOSFET On-Resistance 135
4.2.1 Channel Resistance 137
4.2.2 Accumulation Resistance 137
4.2.3 JFET Resistance 138
4.2.4 Drift Region Resistance 139
4.2.5 Total On-Resistance 140
4.2.5.1 Simulation Results 141
4.3 Blocking Voltage 146
4.3.1 Impact of Edge Termination 146
4.3.1.1 Simulation Results 147
4.4 Output Characteristics 151
4.4.1 Simulation Example 152
4.5 Device Capacitances 152
4.5.1 Simulation Example 157
4.6 Gate Charge 160
4.6.1 Simulation Example 162
4.7 Device Figures of Merit 164
4.8 Discussion 166
References 171
Chapter 5: CC-MOSFET Structure 172
5.1 The CC-MOSFET Structure 173
5.2 Charge-Coupling Physics and Blocking Voltage 175
5.2.1 Simulation Results 186
5.3 Power CC-MOSFET On-Resistance 199
5.3.1 Channel Resistance 200
5.3.2 Accumulation Resistance for Current Spreading Region 201
5.3.3 Drift Region Resistance 202
5.3.4 Total On-Resistance 203
5.3.4.1 Simulation Results 205
5.4 Output Characteristics 208
5.4.1 Simulation Example 208
5.5 Device Capacitances 209
5.5.1 Simulation Example 219
5.6 Gate Charge 222
5.6.1 Simulation Example 227
5.7 Device Figures of Merit 230
5.8 Edge Termination 233
5.8.1 Simulation Example 235
5.9 High Voltage Devices 237
5.9.1 Simulation Results 237
5.10 Process Sensitivity Analysis 245
5.11 Discussion 248
References 252
Chapter 6: GD-MOSFET Structure 253
6.1 The GD-MOSFET Structure 254
6.2 Charge-Coupling Physics and Blocking Voltage 256
6.2.1 Simulation Results 262
6.3 Power GD-MOSFET On-Resistance 275
6.3.1 Channel Resistance 277
6.3.2 Accumulation Resistance for Current Spreading Region 278
6.3.3 Drift Region Resistance 278
6.3.4 Total On-Resistance 280
6.3.4.1 Simulation Results 282
6.4 Output Characteristics 283
6.4.1 Simulation Example 284
6.5 Device Capacitances 285
6.5.1 Simulation Example 288
6.6 Gate Charge 290
6.6.1 Simulation Example 292
6.7 Device Figures of Merit 295
6.8 Edge Termination 297
6.9 High Voltage Devices 297
6.9.1 Simulation Results 298
6.10 Process Sensitivity Analysis 318
6.11 Inductive Load Turn-Off Characteristics 322
6.11.1 Simulation Results 327
6.12 Discussion 329
References 334
Chapter 7: SJ-MOSFET Structure 335
7.1 The SJ-MOSFET Structure 336
7.2 Charge-Coupling Physics 338
7.2.1 Simulation Results 341
7.3 Power SJ-MOSFET On-Resistance 358
7.3.1 Channel Resistance 362
7.3.2 Accumulation Resistance for Current Spreading Region 363
7.3.3 Drift Region Resistance 363
7.3.4 Total On-Resistance 365
7.3.4.1 Simulation Results 366
7.4 Output Characteristics 369
7.4.1 Simulation Example 369
7.5 Device Capacitances 369
7.5.1 Simulation Example 376
7.6 Gate Charge 379
7.6.1 Simulation Example 381
7.7 Device Figures of Merit 383
7.8 Edge Termination 385
7.8.1 Simulation Example 386
7.9 High Voltage Devices 390
7.9.1 Simulation Results 390
7.10 Process Sensitivity Analysis 393
7.11 Inductive Load Turn-Off Characteristics 397
7.11.1 Simulation Results 401
7.12 Discussion 403
References 408
Chapter 8: Integral Diode 410
8.1 Power MOSFET Body Diode 411
8.2 Computer Power Supplies 411
8.2.1 Power U-MOSFET Structure 413
8.2.1.1 Simulation Results 414
8.2.2 Power CC-MOSFET Structure 418
8.2.2.1 Simulation Results 420
8.2.3 Power JBSFET Structure 423
8.2.3.1 Simulation Results 426
8.3 Motor Control Application 435
8.3.1 Power U-MOSFET Structure 436
8.3.1.1 Simulation Results 437
8.3.2 Power JBSFET Structure 441
8.3.2.1 Simulation Results 441
8.3.3 Power GD-MOSFET Structure 448
8.3.3.1 Simulation Results 450
8.3.4 Power GD-JBSFET Structure 454
8.3.4.1 Simulation Results 456
8.3.5 Power SJ-MOSFET Structure 472
8.3.5.1 Simulation Results 475
8.3.6 Power SJ-JBSFET Structure 478
8.3.6.1 Simulation Results 479
8.4 Discussion 483
8.4.1 Low-Voltage Devices 484
8.4.2 High-Voltage Devices 485
References 487
Chapter 9: SiC Planar MOSFET Structures 488
9.1 Shielded Planar Inversion-Mode MOSFET Structure 489
9.1.1 Blocking Mode 490
9.1.1.1 Simulation Results 491
9.1.2 Threshold Voltage 495
9.1.3 On-State Resistance 497
9.1.3.1 Channel-Resistance 498
9.1.3.2 Accumulation-Resistance 498
9.1.3.3 JFET-Resistance 499
9.1.3.4 Drift-Resistance 500
9.1.3.5 Total On-Resistance 500
9.1.3.6 Impact of Breakdown Voltage 502
9.1.3.7 Simulation Results 502
9.1.4 Capacitances 504
9.1.5 Gate Charge 507
9.1.5.1 Simulation Example 508
9.1.6 Device Figures of Merit 509
9.1.7 Inductive Load Turn-Off Characteristics 510
9.1.7.1 Simulation Results 513
9.1.8 Body-Diode Characteristics 514
9.2 Shielded Planar ACCUFET Structure 515
9.2.1 Blocking Mode 516
9.2.1.1 Simulation Results 517
9.2.2 Threshold Voltage 521
9.2.3 On-State Resistance 523
9.2.3.1 Channel-Resistance 524
9.2.3.2 Total On-Resistance 524
9.2.3.3 Impact of Breakdown Voltage 525
9.2.3.4 Simulation Results 526
9.2.4 Capacitances 528
9.2.5 Gate Charge 530
9.2.5.1 Simulation Example 531
9.2.6 Device Figures of Merit 533
9.2.7 Inductive Load Turn-Off Characteristics 534
9.2.7.1 Simulation Results 536
9.2.8 Body-Diode Characteristics 538
9.2.8.1 Simulation Results 538
9.3 Discussion 542
References 544
Chapter 10: Synopsis 545
10.1 Computer Power Supplies 546
10.1.1 Inadvertent Turn-On Suppression 547
10.1.2 Device Active Area 549
10.1.3 Switching Power Losses 550
10.1.4 Input Capacitance 550
10.1.5 Device Comparison 550
10.2 High Voltage Motor Control 553
10.3 Device Comparison 559
10.4 Summary 562
References 562
Index 567
| Erscheint lt. Verlag | 26.6.2010 |
|---|---|
| Zusatzinfo | XVI, 562 p. |
| Verlagsort | New York |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie |
| Technik ► Elektrotechnik / Energietechnik | |
| Schlagworte | advanced power MOSFETs • analytical models • device operation • device physics • field-effect transistor • Integrated circuit • metal oxide semiconductur field-effect transistor • Numerical simulations • power device community • power MOSFETs • Simulation • two-dimensional simulations • U-groove metal-oxide-semiconductor transistor |
| ISBN-10 | 1-4419-5917-3 / 1441959173 |
| ISBN-13 | 978-1-4419-5917-1 / 9781441959171 |
| Haben Sie eine Frage zum Produkt? |
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