Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration (eBook)
XIV, 292 Seiten
Springer US (Verlag)
978-0-387-28843-7 (ISBN)
Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost.
Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology.
We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 µm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated.
The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.
Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost.Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology.We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 m-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated.The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.
Abstract 5
Acknowledgments 7
Contents 9
Part I Introduction: Context and motivations 14
0.1 Why Silicon-on-Insulator technology ? 16
0.2 Why a thin-film membrane ? 18
0.3 Why co-integration and CMOS compatibility ? 20
0.4 Contents of the work 22
Part II Techniques and materials 26
Chapter 1 Silicon bulk micromachining with TMAH 27
1.1 Introduction 27
1.2 Generalities about silicon micromachining 29
1.3 TMAH silicon etching 33
1.4 Selectivity versus dielectrics 38
1.5 Selectivity versus aluminum 39
1.6 Selectivity versus other metals 47
1.7 Etch-Stop 48
1.8 Undercutting 51
1.9 Summary 55
Chapter 2 Thin dielectric films stress extraction 56
2.1 Introduction - Definitions 57
2.2 Stress measurements by substrate curvature method 65
2.3 Strain measurements using micromachined structures 78
2.4 Final conclusions 111
Part III Microsensors 113
Chapter 1 Low power microhotplate as basic cell 114
1.1 Introduction 114
1.2 Motivations 117
1.3 Materials selection 118
1.4 Thermal design 120
1.5 Device fabrication 127
1.6 Microheater characterization and results 134
1.7 Conclusions 166
Chapter 2 Microheater based flow sensor 169
2.1 Introduction 169
2.2 Design and fabrication 170
2.3 Measurements results 174
2.4 Discussions and comparison with the state- of- the- art 193
2.5 Conclusions 194
Chapter 3 Gas Sensors on microhotplate 198
3.1 Introduction 198
3.2 Interdigitated electrodes: from design to deposition 200
3.3 Sensitive layer deposition 205
3.4 Summary of the fabrication steps 208
3.5 Measurements results without gas 210
3.6 Measurement results under gas and discussions 212
3.7 Conclusions 217
Chapter 4 SOI- CMOS compatibility validation 218
4.1 Introduction 218
4.2 Basics of SOI technology 220
4.3 Post-processing steps 225
4.4 Measurements 225
4.5 Transistors on membrane as final demonstrator 240
4.6 Conclusions 248
Part IV Conclusions and outlook 250
Appendices 257
Appendix A ( 100) Silicon crystallography 258
Appendix B About Interferometry... 262
Appendix C About Reflectometry... 265
Bibliography 267
Publications originated from this work 287
Index 290
| Erscheint lt. Verlag | 11.10.2006 |
|---|---|
| Zusatzinfo | XIV, 292 p. |
| Verlagsort | New York |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Mechanik |
| Technik ► Bauwesen | |
| Technik ► Elektrotechnik / Energietechnik | |
| Schlagworte | Basics • CMOS • Co-integration • crystallography • Gas-flow sensors • Interferometry • REM • Silicon-on-insulator • Thin-films residual stress • TMAH released membranes • Transistor |
| ISBN-10 | 0-387-28843-0 / 0387288430 |
| ISBN-13 | 978-0-387-28843-7 / 9780387288437 |
| Haben Sie eine Frage zum Produkt? |
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