High-Linearity CMOS RF Front-End Circuits - Yongwang Ding, Ramesh Harjani

High-Linearity CMOS RF Front-End Circuits

Buch | Softcover
128 Seiten
2010 | Softcover reprint of hardcover 1st ed. 2005
Springer-Verlag New York Inc.
978-1-4419-3663-9 (ISBN)
106,99 inkl. MwSt
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This book focuses on high performance radio frequency integrated circuits (RF IC) design in CMOS. When it is transmitted by a FM radio station, it is often carried by a frequency in the range of tens of megahertz to hundreds of megahertz. Usually a radio is categorized by its carrier frequency, such as 900 MHz radio or 5 GHz radio.
This book focuses on high performance radio frequency integrated circuits (RF IC) design in CMOS. 1. Development of radio frequency ICs Wireless communications has been advancing rapidly in the past two decades. Many high performance systems have been developed, such as cellular systems (AMPS, GSM, TDMA, CDMA, W-CDMA, etc. ), GPS system (global po- tioning system) and WLAN (wireless local area network) systems. The rapid growth of VLSI technology in both digital circuits and analog circuits provides benefits for wireless communication systems. Twenty years ago not many p- ple could imagine millions of transistors in a single chip or a complete radio for size of a penny. Now not only complete radios have been put in a single chip, but also more and more functions have been realized by a single chip and at a much lower price. A radio transmits and receives electro-magnetic signals through the air. The signals are usually transmitted on high frequency carriers. For example, a t- ical voice signal requires only 30 Kilohertz bandwidth. When it is transmitted by a FM radio station, it is often carried by a frequency in the range of tens of megahertz to hundreds of megahertz. Usually a radio is categorized by its carrier frequency, such as 900 MHz radio or 5 GHz radio. In general, the higher the carrier frequency, the better the directivity, but the more difficult the radio design.

RF Devices in CMOS Process.- Linear Transconductors in CMOS.- Linearization with Harmonic Cancellation.- LNA Design in CMOS.- Down-Conversion Mixer Design in CMOS.- Power Amplifier Design in CMOS.- Conclusions.

Erscheint lt. Verlag 29.10.2010
Zusatzinfo 25 Illustrations, black and white; XVI, 128 p. 25 illus.
Verlagsort New York, NY
Sprache englisch
Maße 155 x 235 mm
Gewicht 454 g
Themenwelt Technik Elektrotechnik / Energietechnik
ISBN-10 1-4419-3663-7 / 1441936637
ISBN-13 978-1-4419-3663-9 / 9781441936639
Zustand Neuware
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