Rapid Thermal Processing

Selected papers: Preface. Rapid thermal processing technology for the 21st century (P.J. Timans). Modelling and off-line optimization of a 300 mm rapid thermal processing system (A. Tillmann et al.). Perspectives on emissivity measurements and modeling in silicon (S. Abedrabbo et al.). Dopant diffusion studies and free carrier lifetimes during rapid thermal processing of semiconductors (R.V. Nagabushnam et al.). Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing (D. Mathiot et al.). Formation of contacts to shallow junctions using titanium silicide with diffusion barriers (W. Zagozdzon-Wosik et al.). Effect of stress on silicide formation kinetics in thin film titanium–selicon system (R.V. Nagabushnam et al.). Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1–&khgr;Ge&khgr;/Si heterostructure (Y. Miron et al.). Rapid thermal annealing of Zr/SiGeC contacts (M. Barthula et al.). Influence of vapour phase pre-oxide-cleaning on the oxidation characteristics (B. Froeschle et al.). Rapid thermal oxidation of porous silicon for surface passivation (L. Debarge et al.). Deposition and crystallization of a-Si thin films by rapid thermal processing (S. Girginoudi et al.). The initial stages of Si thin deposits on foreign substrates in a rapid thermal chemical vapor phase reactor (D. Angermeier et al.). Rapid thermal magnetic annealing as an emerging technology in field-annealing of thin magnetic films for recording heads (F. Roozeboom et al.). Selective doping of silicon by rapid thermal and laser assisted processes (U. Besi-Vetrella et al.). Rapid thermal annealing applied to the optimization of titanium oxide arc (M. Lemiti et al.).