Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability -

Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability

David J Dumin (Herausgeber)

Buch | Hardcover
280 Seiten
2002
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-02-4842-0 (ISBN)
133,40 inkl. MwSt
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A summary of our knowledge of oxide reliability, featuring articles written by experts in the field. It should be useful to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can also be used as an introduction for new engineers.
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.

Oxide wearout, breakdown, and reliability, D.J. Dumin; reliability of flash nonvolatile memories, N. Mielke and J. Chen; physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics, J.W. McPherson; breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides, J. Sune et al; MOSFET gate oxide reliability - anode hole injection model and its applications, Y.-C. Yeo et al.

Erscheint lt. Verlag 28.1.2002
Reihe/Serie Selected Topics in Electronics and Systems ; 23
Verlagsort Singapore
Sprache englisch
Themenwelt Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 981-02-4842-3 / 9810248423
ISBN-13 978-981-02-4842-0 / 9789810248420
Zustand Neuware
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