Principles of Semiconductor Devices and Heterojunctions
Pearson (Verlag)
978-0-13-040904-1 (ISBN)
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For junior and senior-level students in electrical engineering or applied physics courses found in departments of Electrical/Computer Engineering.
A comprehensive approach provides detailed descriptions of the basic principles of semiconductor devices with figures, examples, problems, and review questions. Accompanying the text is a complete hyper-linked electronic version of the text on CD-ROM. This CD-ROM contains more-advanced lecture material, print files in PDF format, and calculation spreadsheets that—when combined with the text—form a complete and versatile student resource.
(NOTE: Each chapter begins with an Introduction and concludes with Examples, Problems, Review Questions, Bibliography, Glossary, and Equations.)
1. Review of Modern Physics.
Quantum Mechanics. Electromagnetic Theory. Statistical Thermodynamics. Some Useful Thermodynamic Results.
2. Semiconductor Fundamentals.
Crystals and Crystal Structures. Energy Bands. Density of States. Carrier Distribution Functions. Carrier Densities. Carrier Transport. Carrier Recombination and Generation. Continuity Equation. The Drift-Diffusion Model. Thermoelectric Effects in Semiconductors.
3. Metal-Semiconductor Junctions.
Structure and Principle of Operation. Electrostatic Analysis. Schottky Diode Current. Metal-Semiconductor Contacts. Metal-Semiconductor Field Effect Transistors (MESFETs). Schottky Diode with an Interfacial Layer. Other Unipolar Junctions. Currents Through Insulators.
4. p-n Junctions.
Structure and Principle of Operation. Electrostatic Analysis of a p-n Diode. The p-n Diode Current. Reverse Bias Breakdown. Optoelectronic Devices.
5. Bipolar Junction Transistors.
Structure and Principle of Operation. Ideal Transistor Model. Non-Ideal Effects. Charge Control Model. Microwave BJTs. Heterojunction Bipolar Transistors.
6. Metal-Oxide-Silicon Capacitors.
Structure and Principle of Operation. MOS Analysis. MOS Capacitor Technology.
7. MOS Field Effect Transistors.
Structure and Principle of Operation. MOSFET Analysis. Threshold Voltage. MOSFET SPICE MODEL. MOSFET Circuits and Technology. Advanced MOSFET Issues. HEMTs.
Appendices.
List of Symbols. Physical Constants. Material Parameters. Prefixes. Units. The Greek Alphabet. Periodic Table. Quick Access. Chemistry Issues.
| Erscheint lt. Verlag | 28.1.2014 |
|---|---|
| Sprache | englisch |
| Maße | 178 x 235 mm |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 0-13-040904-9 / 0130409049 |
| ISBN-13 | 978-0-13-040904-1 / 9780130409041 |
| Zustand | Neuware |
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