Operation and Modeling of the MOS Transistor
Seiten
2003
|
2nd Revised edition
Oxford University Press Inc (Verlag)
978-0-19-517014-6 (ISBN)
Oxford University Press Inc (Verlag)
978-0-19-517014-6 (ISBN)
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For advanced semiconductor and microelectronic chip design course that follows the course where Allen/Holberg is used. This work provides a treatment of the operation and modelling of the MOS transistor.
Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
.Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
.Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
.New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
.Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."
Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
.Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
.Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
.New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
.Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."
1. SEMICONDUCTORS, JUNCTIONS AND MOFSET OVERVIEW; 2. THE TWO-TERMINAL MOS STRUCTURE; 3. THE THREE-TERMINAL MOS STRUCTURE; 4. THE FOUR-TERMINAL MOS STRUCTURE; 5. MOS TRANSISTORS WITH ION-IMPLANTED CHANNELS; 6. SMALL-DIMENSION EFFECTS; 7. THE MOS TRANSISTOR IN DYNAMIC OPERATION - LARGE-SIGNAL MODELING; 8. SMALL-SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES; 9. HIGH-FREQUENCY SMALL-SIGNAL MODELS; 10.MOFSET MODELING FOR CIRCUIT SIMULATION
Zusatzinfo | Numerous line figures |
---|---|
Verlagsort | New York |
Sprache | englisch |
Gewicht | 1187 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 0-19-517014-8 / 0195170148 |
ISBN-13 | 978-0-19-517014-6 / 9780195170146 |
Zustand | Neuware |
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